Part Number Hot Search : 
100GD 00145 54HC164 MLL5543B RODUCTS V122K CC4314B 03YAA
Product Description
Full Text Search

LSIC1MO120E0120 - LSIC1MO120E0120 1200 V N-channel, Enhancement-mode SiC MOSFET

LSIC1MO120E0120_9045833.PDF Datasheet


 Full text search : LSIC1MO120E0120 1200 V N-channel, Enhancement-mode SiC MOSFET


 Related Part Number
PART Description Maker
SD1208-50-5 CAP AND SAFETY CHANN, BNC
Winchester Electronics Corporation
CM75E3U-24H Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
CM75DY-24H Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
CM50DY-24H Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
Powerex, Inc.
Powerex Power Semiconductors
SDR1212CTJ SDR1210CTJ SDR1212DRJ 12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
APT15GN120BDQ1 APT15GN120BDQ1G Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Microsemi, Corp.
Advanced Power Technology
STTH6012 STTH6012W 60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247
Ultrafast recovery - 1200 V diode
STMicroelectronics
C-CWP347-18 T-CWP347-12 T-CWP347-18 W-CWP347-18 C- 392.5 A, 1800 V, SCR
392.5 A, 1200 V, SCR
47.1 A, 1200 V, SCR
37.68 A, 1200 V, SCR
81.64 A, 800 V, SCR
81.64 A, 1200 V, SCR
IXYS, Corp.
IXYS CORP
CM10MD1-24H CM10MD1-24 CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts 10 A, 1200 V, N-CHANNEL IGBT
CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,10A I(C)
Powerex, Inc.
Powerex Inc
POWEREX[Powerex Power Semiconductors]
CM75DU-24F Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Microsemi, Corp.
Advanced Power Technology
 
 Related keyword From Full Text Search System
LSIC1MO120E0120 Circuit LSIC1MO120E0120 pci endian mode LSIC1MO120E0120 Polarity LSIC1MO120E0120 battery charger circuit LSIC1MO120E0120 ic equivalent
LSIC1MO120E0120 intersil LSIC1MO120E0120 filetype:pdf LSIC1MO120E0120 Reference LSIC1MO120E0120 rectifier LSIC1MO120E0120 switching
 

 

Price & Availability of LSIC1MO120E0120

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.93050503730774